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 Preliminary Datasheet SCHOTTKY BARRIER RECTIFIERS Features
* * * * Low Forward Voltage Drop Very Small Conduction Losses High Surge Capability Surge Overload Rating up to 50A Peak Value
APD260 Applications
* * * * Low Voltage High Frequency Inverters DC-DC Converters Free Wheeling Polarity Protection
DO-41
DO-15
Figure 1. Package Types of APD260
Pin Configuration
VD/VG Package (DO-41/DO-15) Cathod Anode
Figure 2. Pin Configuration of APD260
Jun. 2008 Rev. 1. 1 1
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet SCHOTTKY BARRIER RECTIFIERS Ordering Information
APD260 Circuit Type E1: Lead Free TR: Ammo Blank: Bulk
APD260
Package VD: DO-41 VG: DO-15
Package DO-41 DO-15
Part Number APD260VD-E1 APD260VDTR-E1 APD260VG-E1 APD260VGTR-E1
Marking ID D260VD D260VD D260VG D260VG
Packing Type Bulk Ammo Bulk Ammo
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Absolute Maximum Ratings (TA=25oC, unless otherwise noted) (Note 1)
Parameter Maximum Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Average Rectified Forward Current 0.375 " (9.5mm) Lead Length (See Figure 3) Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half Sine-Wave on Rated Load Operating Junction Temperature Range Storage Temperature Range Symbol VRRM VDC VRMS IF(AV) IFSM TJ TSTG Value 60 60 42 2.0 50 -65 to 125 -65 to 150 Unit V V V A A
oC oC
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Jun. 2008 Rev. 1. 1 2
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet SCHOTTKY BARRIER RECTIFIERS Thermal Characteristics (TA=25oC, unless otherwise noted)
Parameter Typical Thermal Resistance (Note 2) Symbol RJA RJL Values 52 14 Unit
oC/W
APD260
Note 2: Thermal resistance from junction to lead, PCB mounted, 0.375" (9.5mm) lead length.
Electrical Characteristics (TA=25oC, unless otherwise noted)
Parameter Forward Voltage @ IF=2.0A Reverse Current @ Rated VR (Note 3) TA=25oC TA=100oC Symbol VF IR Values 0.68 0.5 10 Unit V mA
Note 3: Pulse Test: 300 S pulse width, 1.0% duty cycle.
Typical Performance Characteristics (TA=25oC, unless otherwise noted)
2.5
Average Forward Current (A)
2.0
Instantaneous Forward Current (A)
10
1.5
1
1.0
Resistive or Inductive Load 0.375''(9.5mm) Lead length
0.5
0.1
T J=25 C
o
T J=125 C
o
0.0
0.01 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
o Lead Temperature ( C)
Instantaneous Forward Voltage (V)
Figure 3. Forward Current Derating Curve
Figure 4. Typical Instantaneous Forward Characteristics
Jun. 2008 Rev. 1. 1 3
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet SCHOTTKY BARRIER RECTIFIERS Typical Performance Characteristics (Continued) APD260
50 45
10
5
Instantanous Reverse Current (A)
Peak Forward Surge Current (A)
10
4
40 35 30 25 20 15 10
10
3
10
2
TJ=25 C TJ=125 C
o
o
TJ=TJ(max) Single Half Sine-Wave
10
1
10
100
10
0
Number of Cycles at 60Hz
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Maximum Non-Repetitive Peak Forward Surge Current
Figure 6. Typical Reverse Characteristics
Junction Capacitance (pF)
TJ=25 C f=1.0MHz VSIG=50mVp-p
100
o
10 0.1
1
10
100
Reverse Voltage (V)
Figure 7. Typical Junction Capacitance
Jun. 2008 Rev. 1. 1 4
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions DO-41 Unit: mm(inch) APD260
25.400(1.000) MIN
0.700(0.028) 0.900(0.035)
DIA.
4.200(0.165) 5.200(0.205)
2.000(0.080) 2.700(0.107)
DIA.
25.400(1.000) MIN
Jun. 2008 Rev. 1. 1 5
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions (Continued) DO-15 Unit: mm(inch) APD260
25.400(1.000) MIN
0.700(0.028) 0.900(0.034) DIA.
5.800(0.230) 7.600(0.300) 2.600(0.104) 3.600(0.140) DIA. 25.400(1.000) MIN
Jun. 2008 Rev. 1. 1 6
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others.
MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited
- Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788
REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE
BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806


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